Title

Electrical Resistivity of a Thin Metallic Film

Authors

Horacio E. Camblong, University of San FranciscoFollow

Document Type

Article

Publication Date

12-15-1999

Abstract

The electrical resistivity of a pure sample of a thin metallic film is found to depend on the boundary conditions. This conclusion is supported by a free-electron model calculation and confirmed by an ab initio relativistic Korringa-Kohn-Rostoker computation. The low-temperature resistivity is found to be zero for a free-standing film (reflecting boundary conditions) but nonzero when the film is sandwiched between two semi-infinite samples of the same material (outgoing boundary conditions). In the latter case, this resistivity scales inversely with the number of monolayers and is due to the background diffusive scattering by a finite lattice.

Comments

Article published in Physical Review B, 60, pp 15782-15789 (1999).

© 1999 The American Physical Society.

URL: http://link.aps.org/doi/10.1103/PhysRevB.60.15782

DOI: 10.1103/PhysRevB.60.15782

Recommended Citation

Camblong, Horacio E., "Electrical Resistivity of a Thin Metallic Film" (1999). Physics and Astronomy. 9.
https://repository.usfca.edu/phys/9